Infineon CoolMOS™ IPB60R600CP, N-Channel MOSFET, 600 V Vdss, 6.1 A continuous drain, 600 mOhm Rds(on) at 10 V, 27 nC gate charge, TO-263-3 (D²Pak) surface mount, -55°C to 150°C junction temperature.
| Parameter | Value |
|---|---|
| Series | CoolMOS™ |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 600 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 6.1A (Tc) |
| Power dissipation | 60W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Bulk |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Vgs(th) (Max) @ id | 3.5V @ 220µA |
| Rds on (Max) @ id, vgs | 600mOhm @ 3.3A, 10V |
| Gate charge (Qg) (Max) @ vgs | 27 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 550 pF @ 100 V |
The TO-263-3 (D²Pak) footprint is a standard surface-mount power package. The exposed tab carries the drain potential — PCB layout must account for creepage and clearance to adjacent traces at 600 V. The -55°C to 150°C junction temperature range covers industrial and most automotive under-hood environments without derating.
For current BOM lines, this part is a stable, non-risk selection.
The IPB60R600CP and IPB60R600C are functionally the same CoolMOS die — both are 600 V, 6.1 A, 600 mOhm N-channel MOSFETs. The suffix 'P' on the IPB60R600CP indicates a different packaging option or lead-free plating variant; the electrical ratings are identical.
Yes, the IPB60R600CP is ROHS3 compliant.