The IPB60R360P7ATMA1: It comes in a PG-TO263-3 (D2PAK) surface-mount package with an exposed tab for thermal management.
Parametric deep-dive: Rds(on), gate charge, and switching edges
Rds(on) is specified at 360 mOhm maximum with Vgs=10 V and Id=2.7 A. Input capacitance Ciss is 555 pF typical at Vds=400 V. That low capacitance keeps the Miller plateau short, which reduces the dead-time needed in half-bridge configurations and cuts switching losses. Maximum junction temperature is 150°C, and the device dissipates up to 41 W at the case.
How it compares to the CoolMOS™ CE sibling
The IPB60R360P7ATMA1 delivers a 600 V rating versus 500 V, and a 360 mOhm Rds(on) versus 950 mOhm — a 62 % lower on-resistance that halves conduction losses at the same current. Gate charge is 13 nC at 10 V, compared to 10.5 nC on the CE sibling.
