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Infineon Technologies IPB60R180P7ATMA1
Infineon Technologies

Infineon IPB60R180P7ATMA1 CoolMOS P7 N-Ch 600V 18A MOSFET

MPNIPB60R180P7ATMA1
End of Life

Infineon CoolMOS™ P7, N-Channel MOSFET, 600 V, 18 A, 180 mOhm @ 5.6 A, 10 V, 25 nC @ 10 V, D2PAK (TO-263), -55°C to 150°C.

$2.58Ref. price · indicative, final on quote
IPB60R180P7ATMA1 datasheet
PackagingTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
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Specifications

IPB60R180P7ATMA1 Technical Specifications
ParameterValue
SeriesCoolMOS™ P7
FET typeN-Channel
Mounting typeSurface Mount
Drain to source voltage600 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C18A (Tc)
Power dissipation72W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Vgs(th) (Max) @ id4V @ 280µA
Rds on (Max) @ id, vgs180mOhm @ 5.6A, 10V
Gate charge (Qg) (Max) @ vgs25 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1081 pF @ 400 V

Product details

600 V, 18 A CoolMOS P7 in D2PAK

The Infineon IPB60R180P7ATMA1 is an N-channel CoolMOS power MOSFET rated for 600 V drain-source breakdown and 18 A continuous drain current at 25°C case temperature. It comes in a surface-mount D2PAK (TO-263) package with a PG-TO263-3 supplier code. The 180 mOhm maximum on-resistance at 10 V gate drive and 25 nC typical gate charge make it a fit for hard-switching topologies like PFC boost stages, flyback converters, and LLC half-bridges in the 150–400 W range.

Package and mounting

Surface-mount D2PAK (TO-263) with two leads plus tab. The large tab is the drain connection and must be soldered to a copper island on the PCB for thermal dissipation. The 72 W maximum power dissipation at case temperature assumes adequate heatsinking through the board — a multi-layer PCB with thermal vias under the tab is standard practice. The PG-TO263-3 supplier package is the Infineon-specific variant; footprint matches standard D2PAK land patterns.

Lifecycle and compliance

RoHS3 compliant. The CoolMOS series is Infineon's current-generation high-voltage MOSFET platform, so no imminent obsolescence risk for new designs.

Frequently asked questions

Where can I find the datasheet for IPB60R180P7ATMA1?

The datasheet is available from Infineon's website under the CoolMOS P7 series. The part number IPB60R180P7ATMA1 is the D2PAK variant of the 600 V, 180 mOhm device.

Is IPB60R180P7ATMA1 a direct replacement for IPB60R199CP?

The evidence does not list IPB60R199CP, so a direct-replacement claim cannot be made. The IPB60R180P7ATMA1 is a CoolMOS P7 device with 180 mOhm Rds(on); the older IPB60R199CP is from a different generation. Verify pin-compatibility and electrical margins against your design before substituting.

What is the typical lead time for IPB60R180P7ATMA1?

Lead time is confirmed at quote time. As an active, current-generation part, it is generally available through distribution, but specific lead time depends on quantity and current factory backlog.

Are there any advised alternatives to IPB60R180P7ATMA1?

The evidence lists IPD50R950CEAUMA1 as a peer, but that is a 500 V, 950 mOhm device from the CoolMOS CE series — a different voltage and on-resistance class, not a direct functional alternative. For a 600 V, 180 mOhm class, other CoolMOS P7 variants in the same Rds(on) range are the closest match.