The IPB60R160P6ATMA1 N-channel MOSFET has 160 mOhm on-resistance at 9 A, 10 V drive.
Gate charge and switching speed — 44 nC at 10 V
Total gate charge is 44 nC at 10 V. Input capacitance is 2080 pF at 100 V drain-source.
Package and footprint — PG-TO263-3 (D²Pak)
The D²Pak (TO-263-3) footprint is a standard surface-mount power package with a large exposed tab for heatsinking.
The 150°C maximum junction temperature is typical for CoolMOS™; derate the continuous drain current above 100°C per the datasheet curve.
