Infineon CoolMOS™ CP series, N-Channel MOSFET, PG-TO263-3-2 package, 600 V Vdss, 31 A Id, 105 mOhm Rds(on), 80 nC Qg, -40 to 150 °C junction.
| Parameter | Value |
|---|---|
| Series | CoolMOS™ CP |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 600 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 31A (Tc) |
| Power dissipation | 255W (Tc) |
| Operating temperature | -40°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Vgs(th) (Max) @ id | 3.5V @ 1.2mA |
| Rds on (Max) @ id, vgs | 105mOhm @ 18A, 10V |
| Gate charge (Qg) (Max) @ vgs | 80 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 2800 pF @ 100 V |
The IPB60R099CPAATMA1: Surface-mount in a TO-263-3 (D²Pak) footprint — the three leads are the gate, source, and the tab is the drain. A pre-bake at 125 °C for 24 hours is prudent if the reel has been opened longer than the floor life.
It is RoHS3 compliant, so no exemption-based restrictions apply for EU or UKCA markets.
Yes, it is RoHS3 compliant — no restricted substances above the exemption thresholds.
This figure determines the gate-driver current needed for a target switching frequency.
The peer IPD50R950CEAUMA1 is a 500 V, 950 mOhm CoolMOS CE device in the same TO-263-3 package — it is not a functional equivalent for a 600 V, 105 mOhm socket.