IPB60R060C7ATMA1 - Infineon Technologies
MPNIPB60R060C7ATMA1
End of Life
MOSFET N-CH 600V 35A TO263-3
$7.82Ref. price · indicative, final on quote
PackagingTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
RoHSROHS3 Compliant
SeriesCoolMOS™ C7
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Series | CoolMOS™ C7 |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 600 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 35A (Tc) |
| Power dissipation | 162W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Vgs(th) (Max) @ id | 4V @ 800µA |
| Rds on (Max) @ id, vgs | 60mOhm @ 15.9A, 10V |
| Gate charge (Qg) (Max) @ vgs | 68 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 2850 pF @ 400 V |