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Infineon Technologies IPB45N06S4L08ATMA3
Infineon Technologies

IPB45N06S4L08ATMA3 N-Channel MOSFET, 60V 45A

MPNIPB45N06S4L08ATMA3
End of Life

Infineon OptiMOS®-T2 IPB45N06S4L08ATMA3, N-Channel MOSFET, 60 V Vdss, 45 A continuous drain, 7.9 mOhm Rds(on) at 10 V, 64 nC gate charge, TO-263-3 (D2Pak) surface-mount package, -55°C to 175°C junction temperature.

$2.11Ref. price · indicative, final on quote
IPB45N06S4L08ATMA3 datasheet
PackagingTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

IPB45N06S4L08ATMA3 Technical Specifications
ParameterValue
SeriesOptiMOS®-T2
FET typeN-Channel
Mounting typeSurface Mount
Drain to source voltage60 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C45A (Tc)
Power dissipation71W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±16V
TechnologyMOSFET (Metal Oxide)
CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Vgs(th) (Max) @ id2.2V @ 35µA
Rds on (Max) @ id, vgs7.9mOhm @ 45A, 10V
Gate charge (Qg) (Max) @ vgs64 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds4780 pF @ 25 V

Product details

60V, 45A N-channel in a rework-friendly D2Pak

The IPB45N06S4L08ATMA3 is an Infineon OptiMOS-T2 N-channel MOSFET rated for 60 V drain-source and 45 A continuous drain at 25°C case temperature. It comes in a TO-263-3 (D2Pak) surface-mount package — the large copper tab makes it one of the more forgiving power packages under a hot-air station, as long as you preheat the board to keep the tab from wicking heat away too fast.

That figure is specified at 25°C junction; expect it to rise by roughly 50% at 125°C, so budget the conduction loss with the hot value in mind. Total gate charge is 64 nC at 10 V. For a 100 kHz switching frequency, the average gate-drive current works out to about 6.4 mA — well within the capability of a standard gate driver IC. The input capacitance is 4780 pF at 25 V drain-source, which sets the switching energy and the driver's peak current requirement.

The part is ROHS3 compliant, which simplifies compliance for EU and other regulated markets.

Temperature range and package reality

The 175°C TJ max gives headroom for transient overloads. The PG-TO263-3-2 package (D2Pak) has three leads plus the tab. A 2 oz copper pour of at least 6 cm² is a reasonable starting point for continuous operation near the rating.

Frequently asked questions

What is the Rds(on) and gate charge of IPB45N06S4L08ATMA3?

These are the two key numbers for conduction loss and switching loss calculations.

Can IPB45N06S4L08ATMA3 replace an IFX part like IPB45N06S4L08ATMA1?

The suffix ATMA3 vs ATMA1 typically indicates a packaging or reel variation, not a functional difference. Both are 60 V, 45 A OptiMOS-T2 N-channel MOSFETs in the same TO-263-3 package. The ATMA3 is the active order code; the ATMA1 may be a previous revision or alternate packing. Confirm the exact suffix with your BOM before substituting.

What is the maximum junction temperature and recommended operating conditions?

Maximum junction temperature is 175°C. The device is rated for continuous drain current of 45 A at 25°C case temperature, with a gate-drive voltage range of 4.5 V to 10 V for optimal Rds(on). Operating temperature range is -55°C to 175°C junction.