Gate charge and switching — sizing the driver
Total gate charge is 30 nC at 10 V, which means a standard gate-driver IC delivering 1 A peak can switch this MOSFET in under 30 ns. The input capacitance of 2340 pF at 25 V drain-source is moderate — the driver sees a capacitive load that rises with the Miller plateau, but the 30 nC Qg keeps the switching loss manageable up to several hundred kHz.
175 °C junction — headroom for harsh environments
This matters for designs where the MOSFET sits near a hot exhaust manifold, in a downhole tool, or inside a sealed enclosure with limited airflow — the 175 °C Tj(max) allows the part to survive transient overloads that would push a 150 °C-rated device past its absolute maximum.
PG-TO263-3-2 — reflow assembly and thermal interface
The package is a standard TO-263-3 (D²Pak) with the supplier code PG-TO263-3-2. The three-lead footprint matches the industry-standard D²Pak land pattern, so no custom footprint is needed.