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Infineon Technologies IPB35N10S3L26ATMA1
Infineon Technologies

Infineon IPB35N10S3L26ATMA1 N-Channel MOSFET, 100V 35A D2PAK

MPNIPB35N10S3L26ATMA1
End of Life

Infineon OptiMOS™ IPB35N10S3L26ATMA1, N-Channel MOSFET, 100 V Vdss, 35 A continuous drain, 26.3 mOhm Rds(on) at 10 V gate drive, PG-TO263-3 (D2PAK) surface mount, AEC-Q101 qualified, -55°C to 175°C junction temperature.

$2.07Ref. price · indicative, final on quote
IPB35N10S3L26ATMA1 datasheet
PackagingTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

IPB35N10S3L26ATMA1 Technical Specifications
ParameterValue
SeriesAutomotive, AEC-Q101, OptiMOS™
FET typeN-Channel
Mounting typeSurface Mount
Drain to source voltage100 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C35A (Tc)
Power dissipation71W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Vgs(th) (Max) @ id2.4V @ 39µA
Rds on (Max) @ id, vgs26.3mOhm @ 35A, 10V
Gate charge (Qg) (Max) @ vgs39 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds2700 pF @ 25 V

Product details

100 V, 35 A N-channel in D2PAK — automotive-grade switching

The Infineon IPB35N10S3L26ATMA1 is an N-channel enhancement-mode MOSFET from the OptiMOS™ family, built on a trench-FET process that balances low on-resistance with fast switching.

On-resistance and gate charge — switching loss trade-off

The 26.3 mOhm Rds(on) at 10 V gate drive is the key conduction loss spec; at 35 A the dissipation is I²R = 32.2 W, which needs to be managed against the 71 W power dissipation limit at the case. The gate charge (Qg) is 39 nC at 10 V — a moderate value that keeps the gate-drive power reasonable for switching frequencies up to several tens of kHz without requiring a high-current driver. The input capacitance (Ciss) is 2700 pF at 25 V drain bias, which gives a rough figure for the Miller plateau charge and the switching speed trade-off.

Lifecycle and sourcing

It is ROHS3 compliant.

Frequently asked questions

What is the equivalent or second-source for IPB35N10S3L26ATMA1?

The peer IPD50R950CEAUMA1 is a different voltage class (500 V, 4.3 A, 950 mOhm) from the CoolMOS™ CE family — it is not a functional replacement for this 100 V, 35 A, 26.3 mOhm device. For a drop-in substitute, confirm the package (D2PAK), Rds(on), and gate charge against your BOM requirements.