Infineon OptiMOS™ IPB320N20N3GATMA1, N-Channel MOSFET, 200V Vdss, 34A Id, 32mOhm Rds(on) @ 10V, 29nC Qg, -55°C to 175°C, PG-TO263-3, ROHS3 compliant.
| Parameter | Value |
|---|---|
| Series | OptiMOS™ |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 200 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 34A (Tc) |
| Power dissipation | 136W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Vgs(th) (Max) @ id | 4V @ 90µA |
| Rds on (Max) @ id, vgs | 32mOhm @ 34A, 10V |
| Gate charge (Qg) (Max) @ vgs | 29 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 2350 pF @ 100 V |
The IPB320N20N3GATMA1: Total gate charge is 29 nC at 10 V.
The 200 V drain-source voltage, combined with the 175°C Tj max, gives headroom in 48 V or 72 V bus architectures where transients can exceed 100 V; the 32 mOhm Rds(on) keeps the conduction losses manageable even when derated for high ambient temperature.
Replacement requires the exact same order code — IPB320N20N3GATMA1 — to match the 200 V, 34 A rating, 32 mOhm Rds(on), and the D²Pak (PG-TO263-3) footprint. No drop-in alternate is documented. Ensure the replacement is sourced from a verified supply chain to avoid counterfeit risk.