250V, 64A power switch for DC-DC and motor drives
The IPB200N25N3GATMA1: The 20mOhm typical on-resistance at 10V gate drive keeps conduction losses low — at 64A the I²R dissipation hits 82W, which the 300W package power rating can handle with adequate heatsinking. Gate charge is 86 nC at 10 V.
D2PAK thermal and layout checklist
The TO-263-3 (D2PAK) package has an exposed drain tab. The PCB copper area under the tab sets the thermal resistance. Gate drive voltage is specified at 10V for minimum Rds(on) — the ±20V Vgs max allows headroom for gate overdrive in noisy environments, but the 4V threshold at 270µA means the device is fully off below 4V and requires a clean gate signal to avoid partial conduction. Input capacitance Ciss is 7100pF at 100V drain bias — this dominates the gate-drive current requirement at switching edges; a 10Ω gate resistor gives a 71ns RC time constant, which limits dV/dt and reduces EMI without excessive switching loss.
Sourcing and production status
The OptiMOS™ 3 series is Infineon's established 250V trench technology — no direct replacement announced, but the part is current-production and can be dual-sourced with other 250V N-channel D2PAK MOSFETs sharing similar Rds(on) and Qg specs after verifying the gate drive and thermal requirements.