Active P-channel in TO-263-7 — 2.4 mOhm at 100 A
The Infineon IPB180P04P4L02ATMA2 is a P-Channel MOSFET from the OptiMOS series, built for high-current switching applications where a positive supply rail needs to be switched on the high side without a charge pump.
The 2.4 mOhm maximum on-resistance at 100 A is the lowest in the OptiMOS-P2 40 V P-channel lineup. For a 100 A load, conduction loss at 25°C junction is 24 W at the Rds(on) max — a significant thermal load that the 150 W power dissipation rating must accommodate. The 286 nC total gate charge means the gate driver must supply 2.86 A peak to achieve a 100 ns rise time; a standard 1 A gate driver will slow the switching edge and increase crossover loss. The drive voltage range spans 4.5 V to 10 V for achieving the rated Rds(on). At 4.5 V gate drive the on-resistance will be higher than the 10 V spec — budget for that increase if the gate supply is 5 V logic. The input capacitance of 18700 pF at 25 V drain-source is the capacitive load the driver sees; it dominates the turn-on energy.
The 175°C maximum junction allows the die to run hot in a sealed enclosure, but the Rds(on) will approximately double at 150°C junction compared to the 25°C value — derate the continuous current accordingly.
PG-TO263-7 footprint and sourcing
The IPB180P04P4L02ATMA2 is supplied in a PG-TO263-7-3 package (D²Pak, 6 leads plus tab), surface-mount.