IPB180N10S403ATMA1

Infineon Technologies · Automotive, AEC-Q101, OptiMOS™ Series

MOSFET N-CH 100V 180A TO263-7

Infineon Technologies IPB180N10S403ATMA1
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[IN STOCK] In Stock: 9 pcs
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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

IPB180N10S403ATMA1 specifications
Parameter / AttributeSpecification / Value
SeriesAutomotive, AEC-Q101, OptiMOS™
FET typeN-Channel
MountingSurface Mount
Drain to source voltage100 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C180A (Tc)
Power dissipation250W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-263-7, D²Pak (6 Leads + Tab)
Vgs(th) (Max) @ id3.5V @ 180µA
Rds on (Max) @ id, vgs3.3mOhm @ 100A, 10V
Gate charge (Qg) (Max) @ vgs140 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds10120 pF @ 25 V
IPB180N10S403ATMA1
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