IPB180N10S403ATMA1 - Infineon Technologies
MPNIPB180N10S403ATMA1
End of Life
MOSFET N-CH 100V 180A TO263-7
$6.3Ref. price · indicative, final on quote
PackagingTO-263-7, D²Pak (6 Leads + Tab)
RoHSROHS3 Compliant
SeriesAutomotive, AEC-Q101, OptiMOS™
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Series | Automotive, AEC-Q101, OptiMOS™ |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 100 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 180A (Tc) |
| Power dissipation | 250W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-263-7, D²Pak (6 Leads + Tab) |
| Vgs(th) (Max) @ id | 3.5V @ 180µA |
| Rds on (Max) @ id, vgs | 3.3mOhm @ 100A, 10V |
| Gate charge (Qg) (Max) @ vgs | 140 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 10120 pF @ 25 V |