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Infineon Technologies IPB180N04S4H0ATMA1

Infineon IPB180N04S4H0ATMA1 OptiMOS N-Ch 40V 180A MOSFET

MPNIPB180N04S4H0ATMA1
End of Life

Infineon OptiMOS IPB180N04S4H0ATMA1, N-Channel MOSFET, 40V Vdss, 180A Id at 25°C, 1.1mOhm Rds(on) at 10V, 225nC Qg, PG-TO263-7-3 package, -55°C to 175°C.

$4.19Ref. price · indicative, final on quote
PackagingTO-263-7, D²Pak (6 Leads + Tab)
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

IPB180N04S4H0ATMA1 Technical Specifications
ParameterValue
SeriesOptiMOS™
FET typeN-Channel
Mounting typeSurface Mount
Drain to source voltage40 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C180A (Tc)
Power dissipation250W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-263-7, D²Pak (6 Leads + Tab)
Vgs(th) (Max) @ id4V @ 180µA
Rds on (Max) @ id, vgs1.1mOhm @ 100A, 10V
Gate charge (Qg) (Max) @ vgs225 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds17940 pF @ 25 V

Product details

Rds(on) at junction temperature — the real conduction loss number

The IPB180N04S4H0ATMA1 lists a maximum Rds(on) of 1.1 mOhm at 100 A with 10 V gate drive, but that figure is specified at 25 °C junction. At a 125 °C junction temperature — typical in a high-current motor drive or synchronous rectifier — the on-resistance roughly doubles. The buyer should budget for an effective 2.2 mOhm or more at operating temperature and size the PCB copper area accordingly.

Gate charge — what it costs to switch 180 A

Total gate charge is 225 nC at 10 V. For a 100 kHz switching frequency, the gate driver must deliver an average current of 22.5 mA just to charge and discharge the gate capacitance. The 17940 pF input capacitance at 25 V drain-source confirms this is a large-die device — the driver output stage needs enough peak current to avoid excessive switching loss during the Miller plateau.

Package and thermal path

The PG-TO263-7-3 package (D²Pak with 6 leads plus tab) is a surface-mount power package.

Lifecycle and compliance

It is ROHS3 compliant. No official second-source or direct replacement is listed in the Infineon cross-reference, so dual-sourcing requires qualification of an electrically similar part from another vendor.

Frequently asked questions

What is the Rds(on) of IPB180N04S4H0ATMA1?

Maximum Rds(on) is 1.1 mOhm at 100 A drain current with 10 V gate drive, specified at 25 °C junction. At operating temperature the value increases — derate accordingly.

Is IPB180N04S4H0ATMA1 RoHS compliant?

Yes, it is ROHS3 compliant.