IPB180N04S4H0ATMA1

Infineon Technologies · OptiMOS™ Series

Infineon OptiMOS IPB180N04S4H0ATMA1, N-Channel MOSFET, 40V Vdss, 180A Id at 25°C, 1.1mOhm Rds(on) at 10V, 225nC Qg, PG-TO263-7-3 package, -55°C to 175°C.

Infineon Technologies IPB180N04S4H0ATMA1
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[IN STOCK] In Stock: 10 pcs
$4.21/ pc

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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

IPB180N04S4H0ATMA1 specifications
Parameter / AttributeSpecification / Value
SeriesOptiMOS™
FET typeN-Channel
MountingSurface Mount
Drain to source voltage40 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C180A (Tc)
Power dissipation250W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-263-7, D²Pak (6 Leads + Tab)
Vgs(th) (Max) @ id4V @ 180µA
Rds on (Max) @ id, vgs1.1mOhm @ 100A, 10V
Gate charge (Qg) (Max) @ vgs225 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds17940 pF @ 25 V

Technical details

Rds(on) at junction temperature — the real conduction loss number

The IPB180N04S4H0ATMA1 lists a maximum Rds(on) of 1.1 mOhm at 100 A with 10 V gate drive, but that figure is specified at 25 °C junction. At a 125 °C junction temperature — typical in a high-current motor drive or synchronous rectifier — the on-resistance roughly doubles. The buyer should budget for an effective 2.2 mOhm or more at operating temperature and size the PCB copper area accordingly.

Gate charge — what it costs to switch 180 A

Total gate charge is 225 nC at 10 V.

The PG-TO263-7-3 package (D²Pak with 6 leads plus tab) is a surface-mount power package.

It is ROHS3 compliant.

IPB180N04S4H0ATMA1
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