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Infineon Technologies IPB180N04S401ATMA1

IPB180N04S401ATMA1 OptiMOS N-Ch 40V 180A MOSFET, TO-263-7

MPNIPB180N04S401ATMA1
End of Life

Infineon OptiMOS™ IPB180N04S401ATMA1, N-Channel MOSFET, 40 V Vdss, 180 A Id, 1.3 mOhm Rds(on) at 10 V, 176 nC Qg, TO-263-7 (D²Pak) package, -55°C to 175°C.

$3.93Ref. price · indicative, final on quote
Infineon Technologies IPB180N04S401ATMA1 datasheet (PDF)
PackagingTO-263-7, D²Pak (6 Leads + Tab)
RoHSROHS3 Compliant
SeriesOptiMOS™
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IPB180N04S401ATMA1 specifications
ParameterValue
SeriesOptiMOS™
FET typeN-Channel
MountingSurface Mount
Drain to source voltage40 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C180A (Tc)
Power dissipation188W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-263-7, D²Pak (6 Leads + Tab)
Vgs(th) (Max) @ id4V @ 140µA
Rds on (Max) @ id, vgs1.3mOhm @ 100A, 10V
Gate charge (Qg) (Max) @ vgs176 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds14000 pF @ 25 V

Product details

40 V, 180 A N-channel — the load-switch floor

The 1.3 mOhm max on-resistance at 100 A, 10 V drive is the headline number — it sets the conduction-loss floor for a high-current load switch or OR-ing application. The TO-263-7 (D²Pak) package with six leads plus a tab gives the thermal path to the board; the exposed pad is the primary heat-removal route.

Gate charge and switching — what 176 nC means for the driver

Total gate charge is 176 nC at 10 V. The input capacitance of 14000 pF at 25 V Vds reinforces the need for a driver stage between the PWM controller and the gate.

Thermal budget — 188 W dissipation ceiling

In a real board, the junction-to-ambient thermal resistance depends on the copper area under the D²Pak tab and any forced airflow.

ROHS3 compliant.

Frequently asked questions

What is the difference between IPB180N04S401ATMA1 and IPD50R950CEAUMA1?

They are not functional substitutes. The IPD50R950CEAUMA1 is a 500 V CoolMOS™ device rated for 4.3 A with 950 mOhm Rds(on) — a high-voltage, low-current switch. The IPB180N04S401ATMA1 is a 40 V, 180 A low-voltage, high-current part. The only shared parameter is the ±20 V gate maximum.