Infineon Technologies · OptiMOS™ Series
Infineon OptiMOS™ IPB180N04S400ATMA1, N-Channel MOSFET, 40 V Vdss, 180 A Id, 0.98 mOhm Rds(on) max at 10 V, TO-263-7 (PG-TO263-7-3), -55°C to 175°C.
MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T
| Parameter / Attribute | Specification / Value |
|---|---|
| Series | OptiMOS™ |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 40 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 180A (Tc) |
| Power dissipation | 300W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-263-7, D²Pak (6 Leads + Tab) |
| Vgs(th) (Max) @ id | 4V @ 230µA |
| Rds on (Max) @ id, vgs | 0.98mOhm @ 100A, 10V |
| Gate charge (Qg) (Max) @ vgs | 286 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 22880 pF @ 25 V |
The IPB180N04S400ATMA1: Total gate charge Qg is 286 nC at 10 V. Input capacitance Ciss is 22880 pF at 25 V.
The PG-TO263-7-3 package dissipates 300 W at case temperature.