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Infineon Technologies IPB180N03S4L01ATMA1
Infineon Technologies

Infineon IPB180N03S4L01ATMA1 N-Channel MOSFET, 30 V, 180 A

MPNIPB180N03S4L01ATMA1
End of Life

Infineon OptiMOS™ N-Channel MOSFET, 30 V Vdss, 180 A continuous drain, 1.05 mOhm Rds(on) at 10 V, 239 nC gate charge, TO-263-7 (D²Pak) surface mount, -55°C to 175°C junction temperature.

$3.5Ref. price · indicative, final on quote
IPB180N03S4L01ATMA1 datasheet
PackagingTO-263-7, D²Pak (6 Leads + Tab)
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

IPB180N03S4L01ATMA1 Technical Specifications
ParameterValue
SeriesOptiMOS™
FET typeN-Channel
Mounting typeSurface Mount
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C180A (Tc)
Power dissipation188W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±16V
TechnologyMOSFET (Metal Oxide)
CaseTO-263-7, D²Pak (6 Leads + Tab)
Vgs(th) (Max) @ id2.2V @ 140µA
Rds on (Max) @ id, vgs1.05mOhm @ 100A, 10V
Gate charge (Qg) (Max) @ vgs239 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds17600 pF @ 25 V

Product details

1.05 mOhm Rds(on) — the conduction loss floor

The IPB180N03S4L01ATMA1 N-channel MOSFET has a 1.05 mOhm Rds(on) at 100 A and 10 V, with a 188 W power dissipation ceiling.

Gate charge and drive budget

The 239 nC total gate charge at 10 V sets the drive current requirement. The 17600 pF input capacitance at 25 V drain-source means the driver must source enough peak current during the Miller plateau.

Package and thermal path

The TO-263-7 (D²Pak with 6 leads plus tab) surface-mount package exposes the drain tab for heat sinking. The 2.2 V gate threshold at 140 µA is low enough for logic-level drive, but the 4.5 V minimum drive voltage for rated Rds(on) means a 3.3 V logic gate will not fully enhance the channel.

Frequently asked questions

What is the gate charge of the IPB180N03S4L01ATMA1?

The maximum total gate charge is 239 nC at 10 V gate-source voltage. This value determines the gate drive current needed for a given switching frequency.