Infineon OptiMOS™ N-Channel MOSFET, 30 V Vdss, 180 A continuous drain, 1.05 mOhm Rds(on) at 10 V, 239 nC gate charge, TO-263-7 (D²Pak) surface mount, -55°C to 175°C junction temperature.
| Parameter | Value |
|---|---|
| Series | OptiMOS™ |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 30 V |
| Drive voltage (Max rds on, min rds on) | 4.5V, 10V |
| Current - continuous drain (Id) @ 25°C | 180A (Tc) |
| Power dissipation | 188W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±16V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-263-7, D²Pak (6 Leads + Tab) |
| Vgs(th) (Max) @ id | 2.2V @ 140µA |
| Rds on (Max) @ id, vgs | 1.05mOhm @ 100A, 10V |
| Gate charge (Qg) (Max) @ vgs | 239 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 17600 pF @ 25 V |
The IPB180N03S4L01ATMA1 N-channel MOSFET has a 1.05 mOhm Rds(on) at 100 A and 10 V, with a 188 W power dissipation ceiling.
The TO-263-7 (D²Pak with 6 leads plus tab) surface-mount package exposes the drain tab for heat sinking. The 2.2 V gate threshold at 140 µA is low enough for logic-level drive, but the 4.5 V minimum drive voltage for rated Rds(on) means a 3.3 V logic gate will not fully enhance the channel.
The maximum total gate charge is 239 nC at 10 V gate-source voltage. This value determines the gate drive current needed for a given switching frequency.