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Infineon Technologies IPB17N25S3100ATMA1

Infineon IPB17N25S3100ATMA1 N-Channel MOSFET, 250V 17A

MPNIPB17N25S3100ATMA1
End of Life

Infineon OptiMOS™ IPB17N25S3100ATMA1, N-Channel MOSFET, 250 Vdss, 17 A continuous drain, 100 mOhm Rds(on) at 10 V, AEC-Q101, -55°C to 175°C, PG-TO263-3-2.

$2.26Ref. price · indicative, final on quote
Infineon Technologies IPB17N25S3100ATMA1 datasheet (PDF)
PackagingTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
RoHSROHS3 Compliant
SeriesOptiMOS™
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IPB17N25S3100ATMA1 specifications
ParameterValue
SeriesOptiMOS™
FET typeN-Channel
MountingSurface Mount
Drain to source voltage250 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C17A (Tc)
Power dissipation107W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
GradeAutomotive
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
QualificationAEC-Q101
CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Vgs(th) (Max) @ id4V @ 54µA
Rds on (Max) @ id, vgs100mOhm @ 17A, 10V
Gate charge (Qg) (Max) @ vgs19 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1500 pF @ 25 V

Product details

Automotive qualification and junction temperature envelope

The 175°C Tj max gives about 25°C of headroom over standard 150°C-rated parts in the same package.

The recommended drive voltage for the rated on-resistance is 10 V; driving at 12 V is common in 12 V automotive systems and stays within the ±20 V gate-source maximum.

Supplied in the PG-TO263-3-2 package (D²Pak / TO-263AB, surface-mount, 2 leads plus tab). The tape-and-reel quantity suits automated pick-and-place for production runs.

Listed as Active with no last-time-buy notice.

Frequently asked questions

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Can IPB17N25S3100ATMA1 replace IRFB13N25?

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