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Infineon Technologies IPB160N04S4LH1ATMA1
Infineon Technologies

Infineon IPB160N04S4LH1ATMA1 N-Channel MOSFET, 40V 160A

MPNIPB160N04S4LH1ATMA1
End of Life

Infineon OptiMOS IPB160N04S4LH1ATMA1, N-Channel MOSFET, 40V Vdss, 160A Id at 25°C, 1.5mOhm Rds(on) at 100A, 10V, AEC-Q101, PG-TO263-7-3, -55°C to 175°C.

$3.0Ref. price · indicative, final on quote
IPB160N04S4LH1ATMA1 datasheet
PackagingTO-263-7, D²Pak (6 Leads + Tab)
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

IPB160N04S4LH1ATMA1 Technical Specifications
ParameterValue
SeriesOptiMOS™
FET typeN-Channel
Mounting typeSurface Mount
Drain to source voltage40 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C160A (Tc)
Power dissipation167W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
GradeAutomotive
PackageTape & Reel (TR); Cut Tape (CT)
Vgs+20V, -16V
TechnologyMOSFET (Metal Oxide)
QualificationAEC-Q101
CaseTO-263-7, D²Pak (6 Leads + Tab)
Vgs(th) (Max) @ id2.2V @ 110µA
Rds on (Max) @ id, vgs1.5mOhm @ 100A, 10V
Gate charge (Qg) (Max) @ vgs190 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds14950 pF @ 25 V

Product details

The IPB160N04S4LH1ATMA1: Gate charge Qg is 190 nC at 10 V. Input capacitance Ciss is 14950 pF at 25 V drain-source.

Package and thermal management for the TO-263-7

The PG-TO263-7-3 package (D²Pak with 6 leads plus exposed tab) requires a copper land pattern on the PCB that matches the tab area for thermal dissipation. The 167 W maximum power dissipation at case temperature assumes the tab is soldered to a thermal pad with adequate via array to the inner-layer copper planes. Surface-mount assembly with the exposed tab requires a reflow profile that accounts for the large thermal mass.

Frequently asked questions

Is IPB160N04S4LH1ATMA1 automotive qualified?

Yes, the part is AEC-Q101 qualified, which is the automotive-grade stress and reliability standard for discrete semiconductors.

What is the Rds(on) of IPB160N04S4LH1ATMA1?

The maximum on-resistance is 1.5 mOhm at 100 A drain current and 10 V gate drive. The drive voltage range for achieving the rated Rds(on) is 4.5 V to 10 V, with the lower value giving a higher on-resistance.