Skip to main content
Infineon Technologies IPB160N04S4H1ATMA1

Infineon IPB160N04S4H1ATMA1 N-Channel MOSFET, 40 V, 160 A

MPNIPB160N04S4H1ATMA1
End of Life

Infineon OptiMOS™ IPB160N04S4H1ATMA1, N-channel MOSFET, 40 V Vdss, 160 A Id, 1.6 mOhm Rds(on) at 10 V, TO-263-7 D²Pak, -55 to 175 °C.

$3.0Ref. price · indicative, final on quote
PackagingTO-263-7, D²Pak (6 Leads + Tab)
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

IPB160N04S4H1ATMA1 Technical Specifications
ParameterValue
SeriesOptiMOS™
FET typeN-Channel
Mounting typeSurface Mount
Drain to source voltage40 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C160A (Tc)
Power dissipation167W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-263-7, D²Pak (6 Leads + Tab)
Vgs(th) (Max) @ id4V @ 110µA
Rds on (Max) @ id, vgs1.6mOhm @ 100A, 10V
Gate charge (Qg) (Max) @ vgs137 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds10920 pF @ 25 V

Product details

At 100 A load current, the conduction loss at 25 °C junction is 16 W (I² × R). That figure doubles at 175 °C junction because the on-resistance increases with temperature per the normalised curve — the datasheet's 167 W package dissipation limit at case temperature gives the thermal designer a hard ceiling. The 137 nC total gate charge at 10 V means the gate-driver must source about 1.4 A peak to switch the FET in 100 ns; a standard 1 A driver will stretch the switching edge and increase crossover loss.

175 °C junction — under-hood and high-ambient fit

This part is sized for the engine bay or a sealed enclosure where the ambient air hits 105 °C and the self-heating from the 167 W dissipation pushes the junction toward the limit. The 10 920 pF input capacitance at 25 V drain-source is the load the PWM controller sees — a 100 kHz switching frequency draws about 1.1 A average from the gate-drive supply (Qg × f).

TO-263-7 D²Pak — footprint and thermal land

The PG-TO263-7-3 package is a surface-mount D²Pak with six leads plus the exposed tab. A two-layer board with a 1 oz copper pour under the tab will not sink the full 167 W; a four-layer board with thermal vias into an internal plane is the practical minimum for continuous operation above 50 A.

The ROHS3 compliance is confirmed — no exemption expiry to track for EU markets.

Frequently asked questions

What is the Rds(on) of the IPB160N04S4H1ATMA1?

The maximum on-resistance is 1.6 mOhm at 100 A drain current and 10 V gate drive.

Is the IPB160N04S4H1ATMA1 ROHS compliant?

Yes, it is ROHS3 compliant.