Infineon OptiMOS™FD IPB156N22NFDATMA1, N-Channel MOSFET, 220 V Vdss, 72 A Id, 15.6 mOhm Rds(on) at 10 V, 87 nC Qg, TO-263-3 (D²Pak) surface mount, -55 to 175 °C.
| Parameter | Value |
|---|---|
| Series | OptiMOS™FD |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 220 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 72A (Tc) |
| Power dissipation | 300W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Vgs(th) (Max) @ id | 4V @ 270µA |
| Rds on (Max) @ id, vgs | 15.6mOhm @ 50A, 10V |
| Gate charge (Qg) (Max) @ vgs | 87 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 6930 pF @ 110 V |
The 15.6 mOhm max on-resistance at 50 A, 10 V gate drive sets the conduction loss floor for a 200–220 V bus rail design.
Total gate charge is 87 nC at 10 V.
Housed in a PG-TO263-3-2 (D²Pak) surface-mount package with an exposed drain tab.
Yes, the 220 V drain-source voltage rating matches a 200–220 V bus rail. The 72 A continuous current at 25 °C case provides ample headroom for motor drives, power supplies, and inverters operating on that rail.