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Infineon Technologies IPB136N08N3GATMA1

Infineon IPB136N08N3GATMA1 N-Channel MOSFET, 80 V, 45 A

MPNIPB136N08N3GATMA1
End of Life

Infineon OptiMOS™3 IPB136N08N3GATMA1, N-Channel Power MOSFET, 80 V Vds, 45 A Id, 13.9 mOhm Rds(on) @ 10 V, 25 nC Qg, TO-263-3 (D²Pak), -55 to 175°C.

$0.45Ref. price · indicative, final on quote
PackagingTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

IPB136N08N3GATMA1 Technical Specifications
ParameterValue
SeriesOptiMOS™3
FET typeN-Channel
Mounting typeSurface Mount
Drain to source voltage80 V
Drive voltage (Max rds on, min rds on)6V, 10V
Current - continuous drain (Id) @ 25°C45A (Tc)
Power dissipation79W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageBulk
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Vgs(th) (Max) @ id3.5V @ 33µA
Rds on (Max) @ id, vgs13.9mOhm @ 45A, 10V
Gate charge (Qg) (Max) @ vgs25 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1730 pF @ 40 V

Product details

80 V, 45 A N-channel — where the margin lives

The IPB136N08N3GATMA1: The 25 nC typical gate charge keeps switching losses manageable in the 100–200 kHz range; a gate driver with 2 A peak current will charge the gate in about 12 ns.

Gate drive and switching

The recommended drive voltage range is 6 V to 10 V for minimum Rds(on); at 6 V the on-resistance rises above the 10 V value, so a 10 V gate rail is preferred for full rated current. The ±20 V Vgs max gives headroom for gate ringing on long PCB traces.

Lifecycle and supply posture

It is ROHS3 compliant.

Frequently asked questions

Is IPB136N08N3GATMA1 obsolete?

No — the product status is listed as active.