At 5 mOhm max (100 A, 10 V), the conduction loss at 100 A is 50 W — the 190 W power dissipation rating at case temperature gives headroom, but the junction-to-case thermal path through the D²Pak tab must be sinked to a copper plane or heatsink. Total gate charge is 91 nC at 10 V — a 10 V gate driver needs to source about 9.1 µC per switching cycle; at 20 kHz switching that is 182 mA average drive current, well within a standard automotive gate-driver IC. Input capacitance Ciss is 6540 pF at 25 V drain-source — the Miller plateau duration depends on the gate resistance and driver sink current; a 2 A gate driver charges the gate in roughly 45 ns.
ROHS3 compliant, AEC-Q101 qualified — the qualification covers the full -55 °C to 175 °C junction range and the 100 V / 120 A rating envelope.