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Infineon Technologies IPB120N04S4L02ATMA1
Infineon Technologies

IPB120N04S4L02ATMA1 Infineon OptiMOS N-Ch 40V 120A D2PAK

MPNIPB120N04S4L02ATMA1
End of Life

Infineon OptiMOS™ IPB120N04S4L02ATMA1, N-channel MOSFET, 40 V Vdss, 120 A continuous drain, 1.7 mOhm Rds(on) max at 10 V, PG-TO263-3 (D²Pak) surface mount, -55 to 175 °C junction, AEC-Q101 qualified.

$3.21Ref. price · indicative, final on quote
IPB120N04S4L02ATMA1 datasheet
PackagingTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

IPB120N04S4L02ATMA1 Technical Specifications
ParameterValue
SeriesOptiMOS™
FET typeN-Channel
Mounting typeSurface Mount
Drain to source voltage40 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C120A (Tc)
Power dissipation158W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
GradeAutomotive
PackageTape & Reel (TR); Cut Tape (CT)
Vgs+20V, -16V
TechnologyMOSFET (Metal Oxide)
QualificationAEC-Q101
CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Vgs(th) (Max) @ id2.2V @ 110µA
Rds on (Max) @ id, vgs1.7mOhm @ 100A, 10V
Gate charge (Qg) (Max) @ vgs190 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds14560 pF @ 25 V

Product details

40 V, 120 A automotive power switch

The IPB120N04S4L02ATMA1: It is housed in a PG-TO263-3 (D²Pak) surface-mount package with the tab as the drain connection — the large copper pad under the tab sets the thermal resistance to the board. AEC-Q101 qualification and the -55 to 175 °C junction temperature range place it squarely in automotive under-hood and chassis-domain applications: engine management, electric power steering, DC-DC converters, and high-current load switching.

1.7 mOhm Rds(on) — conduction loss budget

The 1.7 mOhm Rds(on) at 100 A and 10 V sets the conduction loss floor. The 158 W package power dissipation rating at case temperature requires adequate PCB copper area on the drain tab.

Gate charge and switching speed

Total gate charge is 190 nC at 10 V, with an input capacitance of 14560 pF at 25 V drain. The gate driver's supply decoupling must be sized for the charge transfer each cycle.

ROHS3 compliant. No official successor or second-source cross-reference is listed — the part is sole-sourced to Infineon's OptiMOS line.

Frequently asked questions

What is the Rds(on) of IPB120N04S4L02ATMA1?

This is the value used for conduction loss calculations at the rated operating point.

Can IPB120N04S4L02ATMA1 be used in automotive applications?

Yes. It is designed for under-hood and chassis-domain automotive systems such as engine management, DC-DC converters, and high-current load switching.