Infineon OptiMOS™ IPB120N04S4L02ATMA1, N-channel MOSFET, 40 V Vdss, 120 A continuous drain, 1.7 mOhm Rds(on) max at 10 V, PG-TO263-3 (D²Pak) surface mount, -55 to 175 °C junction, AEC-Q101 qualified.
| Parameter | Value |
|---|---|
| Series | OptiMOS™ |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 40 V |
| Drive voltage (Max rds on, min rds on) | 4.5V, 10V |
| Current - continuous drain (Id) @ 25°C | 120A (Tc) |
| Power dissipation | 158W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Grade | Automotive |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | +20V, -16V |
| Technology | MOSFET (Metal Oxide) |
| Qualification | AEC-Q101 |
| Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Vgs(th) (Max) @ id | 2.2V @ 110µA |
| Rds on (Max) @ id, vgs | 1.7mOhm @ 100A, 10V |
| Gate charge (Qg) (Max) @ vgs | 190 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 14560 pF @ 25 V |
The 1.7 mOhm Rds(on) at 100 A and 10 V sets the conduction loss floor.
The gate driver's supply decoupling must be sized for the charge transfer each cycle.
ROHS3 compliant. No official successor or second-source cross-reference is listed — the part is sole-sourced to Infineon's OptiMOS line.
This is the value used for conduction loss calculations at the rated operating point.
Yes. It is designed for under-hood and chassis-domain automotive systems such as engine management, DC-DC converters, and high-current load switching.