The D2PAK (TO-263) footprint with a large copper pad on the PCB is required to pull the 158 W power dissipation away from the die — a two-layer board with limited copper will throttle the current rating.
Infineon IPB120N04S402ATMA1 N-Channel MOSFET, 40V 120A D2PAK
MPNIPB120N04S402ATMA1
End of Life
Infineon OptiMOS N-Channel MOSFET, 40 V Vdss, 120 A continuous drain, 1.8 mOhm Rds(on) at 10 V, 134 nC gate charge, PG-TO263-3 (D2PAK) surface-mount, -55 to 175 °C junction.
$3.21Ref. price · indicative, final on quote
PackagingTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
RoHSROHS3 Compliant
SeriesOptiMOS™
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Series | OptiMOS™ |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 40 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 120A (Tc) |
| Power dissipation | 158W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Vgs(th) (Max) @ id | 4V @ 110µA |
| Rds on (Max) @ id, vgs | 1.8mOhm @ 100A, 10V |
| Gate charge (Qg) (Max) @ vgs | 134 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 10740 pF @ 25 V |
Product details
Frequently asked questions
What is the Rds(on) of IPB120N04S402ATMA1?
The maximum on-resistance is 1.8 mOhm at 100 A drain current with 10 V gate drive.
Is IPB120N04S402ATMA1 RoHS compliant?
Yes, it is ROHS3 compliant.