Infineon OptiMOS™ N-Channel MOSFET, IPB120N04S401ATMA1, 40 V Vdss, 120 A continuous drain, 1.5 mOhm Rds(on) at 10 V, 176 nC gate charge, -55°C to 175°C junction, PG-TO263-3 (D2PAK) surface mount.
| Parameter | Value |
|---|---|
| Series | OptiMOS™ |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 40 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 120A (Tc) |
| Power dissipation | 188W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Vgs(th) (Max) @ id | 4V @ 140µA |
| Rds on (Max) @ id, vgs | 1.5mOhm @ 100A, 10V |
| Gate charge (Qg) (Max) @ vgs | 176 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 14000 pF @ 25 V |
Total gate charge is 176 nC at 10 V. The ±20 V Vgs max leaves headroom for gate-drive overshoot in a hard-switching topology.
Maximum power dissipation is 188 W at the case — the actual limit in a real board depends on the copper area under the D2PAK tab and the airflow.
It is ROHS3 compliant.
Junction temperature range is -55 °C to 175 °C. Maximum power dissipation is 188 W at the case. The actual thermal performance depends on PCB copper area and airflow.