Gate charge and drive budget
Total gate charge is 176 nC at 10 V. At a 100 kHz switching frequency, the average gate-drive current needed is roughly 17.6 mA — within the capability of most dedicated MOSFET drivers, but a microcontroller GPIO will not source that directly. The ±20 V Vgs max leaves headroom for gate-drive overshoot in a hard-switching topology.
Thermal envelope and package
Junction temperature range is -55 °C to 175 °C, making this part suitable for under-hood automotive or industrial environments where the die sees sustained high temperature. Maximum power dissipation is 188 W at the case — the actual limit in a real board depends on the copper area under the D2PAK tab and the airflow.
It is ROHS3 compliant.
