Input capacitance is 650 pF at 100 V drain bias.
The TO-263-3 (D²Pak) surface-mount package, supplier code PG-TO263-3, has a large exposed drain tab. Maximum power dissipation is 250 W at case temperature.
ROHS3 compliant.
Infineon IPB110N20N3LFATMA1 N-Channel MOSFET, 200 V, 88 A
MPNIPB110N20N3LFATMA1
End of Life
Infineon OptiMOS™ 3 IPB110N20N3LFATMA1, N-Channel MOSFET, 200 V Vdss, 88 A Id, 11 mOhm Rds(on) at 10 V, 76 nC Qg, TO-263-3 (D²Pak) surface-mount package, -55°C to 150°C operating temperature.
$8.9Ref. price · indicative, final on quote
PackagingTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
RoHSROHS3 Compliant
SeriesOptiMOS™ 3
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Series | OptiMOS™ 3 |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 200 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 88A (Tc) |
| Power dissipation | 250W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Vgs(th) (Max) @ id | 4.2V @ 260µA |
| Rds on (Max) @ id, vgs | 11mOhm @ 88A, 10V |
| Gate charge (Qg) (Max) @ vgs | 76 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 650 pF @ 100 V |
Product details
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What is the equivalent MOSFET for IPB110N20N3LFATMA1?
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