Infineon OptiMOS™ 3 IPB110N20N3LFATMA1, N-Channel MOSFET, 200 V Vdss, 88 A Id, 11 mOhm Rds(on) at 10 V, 76 nC Qg, TO-263-3 (D²Pak) surface-mount package, -55°C to 150°C operating temperature.
| Parameter | Value |
|---|---|
| Series | OptiMOS™ 3 |
| FET type | N-Channel |
| Mounting type | Surface Mount |
| Drain to source voltage | 200 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 88A (Tc) |
| Power dissipation | 250W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Vgs(th) (Max) @ id | 4.2V @ 260µA |
| Rds on (Max) @ id, vgs | 11mOhm @ 88A, 10V |
| Gate charge (Qg) (Max) @ vgs | 76 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 650 pF @ 100 V |
The IPB110N20N3LFATMA1: Total gate charge is 76 nC at 10 V gate drive. Input capacitance is 650 pF at 100 V drain bias.
The TO-263-3 (D²Pak) surface-mount package, supplier code PG-TO263-3, has a large exposed drain tab. Maximum power dissipation is 250 W at case temperature.
ROHS3 compliant.
Price is the primary decision factor for sourcing buyers comparing distributors.
Stock availability determines lead time and ability to fulfill production.
Engineers need alternatives when the exact part is unavailable or for cost savings.
Transactional intent: conversion requires knowing authorized distributor channels.
Design engineers need pin mapping for PCB layout and compatibility with existing footprints.
Sourcing buyers and maintenance techs need drop-in replacements to avoid redesign.