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Infineon Technologies IPB107N20N3GATMA1

Infineon IPB107N20N3GATMA1 N-Channel MOSFET, 200 V, 88 A

MPNIPB107N20N3GATMA1
End of Life

Infineon OptiMOS™ IPB107N20N3GATMA1, N-Channel MOSFET, 200 V Vdss, 88 A continuous drain at 25°C, 10.7 mOhm Rds(on) at 10 V, 87 nC gate charge, -55°C to 175°C junction, PG-TO263-3 (D2PAK) surface-mount.

$7.86Ref. price · indicative, final on quote
Infineon Technologies IPB107N20N3GATMA1 datasheet (PDF)
PackagingTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
RoHSROHS3 Compliant
SeriesOptiMOS™
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IPB107N20N3GATMA1 specifications
ParameterValue
SeriesOptiMOS™
FET typeN-Channel
MountingSurface Mount
Drain to source voltage200 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C88A (Tc)
Power dissipation300W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Vgs(th) (Max) @ id4V @ 270µA
Rds on (Max) @ id, vgs10.7mOhm @ 88A, 10V
Gate charge (Qg) (Max) @ vgs87 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds7100 pF @ 100 V

Product details

Conduction loss and gate drive budget

The 87 nC total gate charge at 10 V means a 100 kHz switching frequency draws about 8.7 mA average from the gate driver; a 1 A driver handles it easily, but the gate-drive loop inductance and resistance matter for clean turn-on. Input capacitance Ciss is 7100 pF at 100 V drain — this sets the switching energy per cycle and the driver's peak current requirement.

For 88 A continuous, a multi-layer board with thermal vias and a heatsink on the bottom side is expected; the 300 W maximum dissipation at case temperature is a die limit, not a free-air number.

ROHS3 compliant.

Frequently asked questions

Is IPB107N20N3GATMA1 RoHS compliant?

Yes, the IPB107N20N3GATMA1 is ROHS3 compliant per Infineon's listing.