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Infineon Technologies IPB100N12S305ATMA1

IPB100N12S305ATMA1 N-Channel MOSFET, 120 V, 100 A, 5.1 mOhm

MPNIPB100N12S305ATMA1
End of Life

Infineon OptiMOS™ IPB100N12S305ATMA1, N-Channel MOSFET, 120 V Vdss, 100 A Id, 5.1 mOhm Rds(on) at 10 V, PG-TO263-3-1 package, -55 to 175 °C.

$4.8Ref. price · indicative, final on quote
Infineon Technologies IPB100N12S305ATMA1 datasheet (PDF)
PackagingTO-263-4, D²Pak (3 Leads + Tab), TO-263AA
RoHSROHS3 Compliant
SeriesOptiMOS™
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IPB100N12S305ATMA1 specifications
ParameterValue
SeriesOptiMOS™
FET typeN-Channel
MountingSurface Mount
Drain to source voltage120 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C100A (Tc)
Power dissipation300W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-263-4, D²Pak (3 Leads + Tab), TO-263AA
Vgs(th) (Max) @ id4V @ 240µA
Rds on (Max) @ id, vgs5.1mOhm @ 100A, 10V
Gate charge (Qg) (Max) @ vgs185 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds11570 pF @ 25 V

Product details

Active production — 120 V, 100 A N-channel in TO-263

The IPB100N12S305ATMA1: Packaged in the surface-mount PG-TO263-3-1 (D²Pak, 3-lead + tab), this part handles up to 300 W power dissipation at the case.

Gate charge and switching — 185 nC at 10 V

Total gate charge is 185 nC at 10 V, which sets the gate-drive current required for a given switching frequency. Input capacitance Ciss is 11570 pF at 25 V drain-source.

Package and thermal — PG-TO263-3-1

The 300 W power dissipation rating assumes the tab is held at 25 °C — real-world derating depends on the board's thermal resistance and airflow.