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Infineon Technologies IPB100N04S4H2ATMA1
Infineon Technologies

Infineon IPB100N04S4H2ATMA1 N-Channel MOSFET, 40V 100A

MPNIPB100N04S4H2ATMA1
End of Life

Infineon OptiMOS N-Channel MOSFET, 40 V Drain-Source, 100 A Continuous Drain, 2.4 mOhm Rds(on) at 10 V, 90 nC Gate Charge, TO-263-3 (D²Pak) Surface Mount, -55°C to 175°C Junction.

$2.74Ref. price · indicative, final on quote
IPB100N04S4H2ATMA1 datasheet
PackagingTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

IPB100N04S4H2ATMA1 Technical Specifications
ParameterValue
SeriesOptiMOS™
FET typeN-Channel
Mounting typeSurface Mount
Drain to source voltage40 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C100A (Tc)
Power dissipation115W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Vgs(th) (Max) @ id4V @ 70µA
Rds on (Max) @ id, vgs2.4mOhm @ 100A, 10V
Gate charge (Qg) (Max) @ vgs90 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds7180 pF @ 25 V

Product details

40 V, 100 A N-channel — the conduction-loss floor

The IPB100N04S4H2ATMA1 N-channel MOSFET has a 40 V drain-source voltage and 100 A continuous drain current.

Switching loss and thermal budget

Input capacitance Ciss is 7180 pF typical at 25 V drain-source. The 115 W maximum power dissipation at case temperature 25°C is the thermal ceiling.

Package and mounting — the thermal path

The TO-263-3 (D²Pak) surface-mount package with exposed tab requires a large copper area on the PCB for heat spreading. The supplier device package is PG-TO263-3-2.

Frequently asked questions

What is the Rds(on) of the IPB100N04S4H2ATMA1?

The maximum Rds(on) is 2.4 mOhm at 100 A drain current with 10 V gate drive. This is the conduction-loss spec for the fully enhanced channel.

What package does the IPB100N04S4H2ATMA1 come in?

It comes in a TO-263-3 (D²Pak) surface-mount package, supplier package code PG-TO263-3-2.