Infineon OptiMOS N-Channel MOSFET, 40 V Drain-Source, 100 A Continuous Drain, 2.4 mOhm Rds(on) at 10 V, 90 nC Gate Charge, TO-263-3 (D²Pak) Surface Mount, -55°C to 175°C Junction.
| Parameter | Value |
|---|---|
| Series | OptiMOS™ |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 40 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 100A (Tc) |
| Power dissipation | 115W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Vgs(th) (Max) @ id | 4V @ 70µA |
| Rds on (Max) @ id, vgs | 2.4mOhm @ 100A, 10V |
| Gate charge (Qg) (Max) @ vgs | 90 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 7180 pF @ 25 V |
The IPB100N04S4H2ATMA1 N-channel MOSFET has a 40 V drain-source voltage and 100 A continuous drain current.
Input capacitance Ciss is 7180 pF typical at 25 V drain-source.
The supplier device package is PG-TO263-3-2.
The maximum Rds(on) is 2.4 mOhm at 100 A drain current with 10 V gate drive. This is the conduction-loss spec for the fully enhanced channel.
It comes in a TO-263-3 (D²Pak) surface-mount package, supplier package code PG-TO263-3-2.