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Infineon Technologies IPB100N04S2-04 — Logic ICs

IPB100N04S2-04 N-Channel MOSFET, 40V 100A, 3.3mOhm Rds(on)

MPNIPB100N04S2-04
End of Life

Infineon IPB100N04S2-04 N-channel MOSFET, 40V Vdss, 100A Id, 3.3mOhm Rds(on) at 10V, 172nC gate charge, TO-263-3 (D²Pak) package, -55°C to 175°C operating temperature.

$1.98Ref. price · indicative, final on quote
PackagingTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
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Specifications

IPB100N04S2-04 Technical Specifications
ParameterValue
Series*
FET typeN-Channel
Mounting typeSurface Mount
Drain to source voltage40 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C100A (Tc)
Power dissipation300W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageBulk
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs3.3mOhm @ 80A, 10V
Gate charge (Qg) (Max) @ vgs172 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds5300 pF @ 25 V

Product details

40 V, 100 A, 3.3 mOhm — the power switch for high-current rails

The 172 nC typical gate charge at 10 V means the gate driver needs to source and sink moderate charge for fast switching; expect a few hundred nanoseconds of rise time with a standard 2 A driver.

Package and mounting

For a 100 kHz switching frequency, the average gate-drive current required is about 17 mA — well within the capability of most half-bridge drivers. The input capacitance of 5300 pF at 25 V drain bias is moderate; the Miller plateau will be visible on the gate waveform. If you are paralleling multiple devices, match the gate resistors to within 10% to avoid current hogging during turn-on.

Thermal and temperature range

The 300 W power dissipation rating at case temperature 25°C assumes an infinite heatsink — in practice, derate based on the junction-to-case thermal resistance. The 175°C max junction temperature gives headroom for transient overloads, but continuous operation near the limit will reduce lifetime.

Frequently asked questions

What is the Rds(on) and gate charge of IPB100N04S2-04?

The gate charge (Qg) is 172 nC maximum at 10 V gate voltage. These are the key switching and conduction numbers for sizing the gate driver and estimating losses.