Infineon IPB100N04S2-04 N-channel MOSFET, 40V Vdss, 100A Id, 3.3mOhm Rds(on) at 10V, 172nC gate charge, TO-263-3 (D²Pak) package, -55°C to 175°C operating temperature.
| Parameter | Value |
|---|---|
| Series | * |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 40 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 100A (Tc) |
| Power dissipation | 300W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Bulk |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Vgs(th) (Max) @ id | 4V @ 250µA |
| Rds on (Max) @ id, vgs | 3.3mOhm @ 80A, 10V |
| Gate charge (Qg) (Max) @ vgs | 172 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 5300 pF @ 25 V |
If you are paralleling multiple devices, match the gate resistors to within 10% to avoid current hogging during turn-on.
The 175°C max junction temperature gives headroom for transient overloads, but continuous operation near the limit will reduce lifetime.
The gate charge (Qg) is 172 nC maximum at 10 V gate voltage. These are the key switching and conduction numbers for sizing the gate driver and estimating losses.