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Infineon Technologies IPB093N04LG

Infineon IPB093N04LG N-Channel MOSFET, 40V, 50A, 9.3mOhm

MPNIPB093N04LG
End of Life

Infineon OptiMOS™ 3 IPB093N04LG, N-Channel Power MOSFET, 40 V Vdss, 50 A Id, 9.3 mOhm Rds(on) at 10 V, 28 nC Qg, TO-263-3 (D²Pak) surface-mount, -55 to 175 °C.

$0.32Ref. price · indicative, final on quote
PackagingTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
RoHSROHS3 Compliant
SeriesOptiMOS™ 3
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IPB093N04LG specifications
ParameterValue
SeriesOptiMOS™ 3
FET typeN-Channel
MountingSurface Mount
Drain to source voltage40 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C50A (Tc)
Power dissipation47W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageBulk
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Vgs(th) (Max) @ id2V @ 77µA
Rds on (Max) @ id, vgs9.3mOhm @ 50A, 10V
Gate charge (Qg) (Max) @ vgs28 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds2100 pF @ 20 V

Product details

Package and mounting — the D²Pak tab is the thermal path

It comes in a TO-263-3 (D²Pak) surface-mount package, supplier code PG-TO-263-3-2. The large drain tab on the bottom needs a good thermal pad on the PCB — a few vias to an inner-layer copper pour keep the junction below 175 °C at full load. The part is rated for 47 W power dissipation at the case, so the board-level heatsinking is what determines the real current you can pull continuously.

The gate threshold voltage is 2 V max at 77 µA drain current.

Frequently asked questions

What are the equivalent or alternative parts for IPB093N04LG?

The IPB093N04LG is an active, current-production part, so no direct replacement is needed. For a pin-compatible alternative within the same OptiMOS™ 3 family, look at other 40 V N-channel devices in the TO-263-3 package — the Rds(on) and gate charge will differ, so check the specific ratings against your design.