Gate charge and switching speed
The IPB083N10N3GATMA1: Total gate charge is 55 nC at 10 V. Input capacitance is 3980 pF at 50 V drain bias.
Thermal and environmental range
Operating temperature range is -55°C to 175°C.
Infineon IPB083N10N3GATMA1 N-Channel MOSFET, 100V 80A
MPNIPB083N10N3GATMA1
End of Life
Infineon OptiMOS™ IPB083N10N3GATMA1, N-Channel MOSFET, 100V Vdss, 80A Id, 8.3 mOhm Rds(on) at 10V, 55 nC Qg, PG-TO263-3, -55°C to 175°C.
$1.63Ref. price · indicative, final on quote
PackagingTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
RoHSROHS3 Compliant
SeriesOptiMOS™
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Series | OptiMOS™ |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 100 V |
| Drive voltage (Max rds on, min rds on) | 6V, 10V |
| Current - continuous drain (Id) @ 25°C | 80A (Tc) |
| Power dissipation | 125W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Vgs(th) (Max) @ id | 3.5V @ 75µA |
| Rds on (Max) @ id, vgs | 8.3mOhm @ 73A, 10V |
| Gate charge (Qg) (Max) @ vgs | 55 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 3980 pF @ 50 V |
Product details
Frequently asked questions
Can the IPB083N10N3GATMA1 be used for high-power switching?
Yes. The 100 V drain-source rating and 80 A continuous drain current, combined with the 8.3 mOhm Rds(on) and 125 W power dissipation, make it suitable for high-current switching in motor drives, DC-DC converters, and power supplies. The 55 nC gate charge keeps switching losses manageable at moderate frequencies.