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Infineon Technologies IPB080N03L G

Infineon IPB080N03L G N-Channel MOSFET, 30 V, 8 mOhm, TO-263

MPNIPB080N03L G
End of Life

Infineon OptiMOS 3 IPB080N03L G, N-Channel Power MOSFET, 30 V Vdss, 8 mOhm Rds(on) @ 30 A, 10 V, 50 A continuous drain, TO-263-3 (D2Pak) surface mount, -55 to 175 °C junction.

$0.4Ref. price · indicative, final on quote
PackagingTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

IPB080N03L G Technical Specifications
ParameterValue
SeriesOptiMOS™3
FET typeN-Channel
Mounting typeSurface Mount
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C50A
Power dissipation47W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageBulk
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Vgs(th) (Max) @ id2.2V @ 250µA
Rds on (Max) @ id, vgs8mOhm @ 30A, 10V
Gate charge (Qg) (Max) @ vgs18 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1900 pF @ 15 V

Product details

Gate charge and switching speed — what 18 nC Qg means for the driver

Total gate charge is 18 nC at 10 V gate drive. For a 100 kHz switching frequency, the average gate-drive current is about 1.8 mA — well within the output capability of a standard gate-driver IC. The 1900 pF input capacitance at 15 V drain bias tells you the driver sees a moderate capacitive load; a 1 A gate-driver will switch the MOSFET in tens of nanoseconds, though the miller plateau will dominate the actual switching loss.

Junction temperature range — -55 to 175 °C

That 175 °C ceiling is the absolute maximum junction temperature — the 47 W power dissipation rating at case temperature assumes you can keep the case cool enough to stay below that limit. In practice, for an under-hood automotive or industrial motor-drive environment where ambient hits 105 °C, the 8 mOhm Rds(on) keeps the die temperature rise manageable at moderate loads.

Frequently asked questions

What is the difference between IPB080N03L G and IPB160N03L G?

Both are 30 V N-channel OptiMOS 3 MOSFETs in the same TO-263 package. The IPB080N03L G has an 8 mOhm Rds(on) rating; the IPB160N03L G is a higher on-resistance variant (16 mOhm) with a correspondingly lower current rating. The IPB080N03L G is the lower-loss choice for higher-current loads.