150 V Vdss — the voltage class that sets the bus margin
The IPB073N15N5ATMA1 is an Infineon OptiMOS™-5 N-channel power MOSFET with a 150 V drain-to-source breakdown voltage and a continuous drain current rating of 114 A at a case temperature. The 7.3 mOhm on-resistance at 57 A and 10 Vgs gives a conduction-loss floor. The package is rated for 214 W dissipation at the case.
61 nC gate charge and the driver budget
Total gate charge at 10 V is 61 nC. The drive voltage window is 8 V to 10 V for achieving the rated Rds(on). Input capacitance is 4700 pF measured at 75 V Vds.
175 °C junction — thermal headroom for tight enclosures
The maximum junction temperature is 175 °C. In a 214 W dissipation package (Tc) that margin matters when the heatsink is constrained. The threshold voltage is 4.6 V maximum at 160 µA drain current.
TO-263-3 footprint and the exposed tab
The part comes in a TO-263-3 (D²Pak) surface-mount package with the supplier device code PG-TO263-3-2. The exposed drain tab is the primary thermal path — the PCB copper area under the tab sets the junction-to-ambient thermal resistance. This is a standard footprint for 150 A-class MOSFETs in automotive and industrial power stages.
It is ROHS3 compliant.