Infineon OptiMOS series, IPB072N15N3GATMA1, N-Channel MOSFET, 150 Vdss, 100 A continuous drain, 7.2 mOhm Rds(on) at 10 V, TO-263-3 (D2PAK) surface mount, -55 to 175 °C.
| Parameter | Value |
|---|---|
| Series | OptiMOS™ |
| FET type | N-Channel |
| Mounting type | Surface Mount |
| Drain to source voltage | 150 V |
| Drive voltage (Max rds on, min rds on) | 8V, 10V |
| Current - continuous drain (Id) @ 25°C | 100A (Tc) |
| Power dissipation | 300W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Vgs(th) (Max) @ id | 4V @ 270µA |
| Rds on (Max) @ id, vgs | 7.2mOhm @ 100A, 10V |
| Gate charge (Qg) (Max) @ vgs | 93 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 5470 pF @ 75 V |
Total gate charge is 93 nC at 10 V — a figure that tells the gate-driver designer the average drive current needed for a given switching frequency. At 100 kHz, that is 9.3 mA average from the driver; the ±20 V Vgs max allows using 12 V or 15 V gate drives common in industrial power supplies without level-shifting.
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