IPB065N15N3GATMA1

Infineon Technologies · OptiMOS™ Series

Infineon OptiMOS™ IPB065N15N3GATMA1, N-Channel MOSFET, 150V Vdss, 130A Id, 6.5mOhm Rds(on) at 100A, 10V, TO-263-7 (PG-TO263-7), -55°C to 175°C.

Infineon Technologies IPB065N15N3GATMA1
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[IN STOCK] In Stock: 8 pcs
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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

IPB065N15N3GATMA1 specifications
Parameter / AttributeSpecification / Value
SeriesOptiMOS™
FET typeN-Channel
MountingSurface Mount
Drain to source voltage150 V
Drive voltage (Max rds on, min rds on)8V, 10V
Current - continuous drain (Id) @ 25°C130A (Tc)
Power dissipation300W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-263-7, D²Pak (6 Leads + Tab)
Vgs(th) (Max) @ id4V @ 270µA
Rds on (Max) @ id, vgs6.5mOhm @ 100A, 10V
Gate charge (Qg) (Max) @ vgs93 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds7300 pF @ 75 V

Technical details

IPB065N15N3GATMA1
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