Infineon OptiMOS™ IPB060N15N5ATMA1, N-Channel MOSFET, 150V Vdss, 136A Id, 6mOhm Rds(on) at 10V, 68nC Qg, TO-263-7 (D²Pak), -55°C to 175°C.
| Parameter | Value |
|---|---|
| Series | OptiMOS™ |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 150 V |
| Drive voltage (Max rds on, min rds on) | 8V, 10V |
| Current - continuous drain (Id) @ 25°C | 136A (Tc) |
| Power dissipation | 250W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-263-7, D²Pak (6 Leads + Tab) |
| Vgs(th) (Max) @ id | 4.6V @ 180µA |
| Rds on (Max) @ id, vgs | 6mOhm @ 68A, 10V |
| Gate charge (Qg) (Max) @ vgs | 68 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 5300 pF @ 75 V |
The 5300 pF input capacitance at 75 V drain bias gives a rough Miller plateau charge; pair it with a driver that can source and sink at least 2 A to keep switching edges clean and cross-conduction low.
The 0.50 mm lead pitch requires a standard footprint; the tab's solder-paste coverage should be at least 50 % to avoid voids under reflow.
Yes. The drain-source voltage rating is 150 V, and the maximum on-resistance is 6 mOhm at 68 A drain current with 10 V gate drive.
The maximum Rds(on) is 6 mOhm at 68 A drain current and 10 V gate drive. The drive voltage range for achieving the rated Rds(on) is 8 V to 10 V.
Yes, it is ROHS3 compliant.