Active production, 60 V N-channel for 12 V and 48 V rails
The Infineon IPB057N06NATMA1 is an OptiMOS N-channel power MOSFET rated for 60 V drain-source and 45 A continuous drain current at the case.
175 °C junction — thermal headroom for tight enclosures
The 83 W power dissipation at the case (Tc) assumes a proper thermal interface to a heatsink or PCB copper plane; the 3 W at ambient (Ta) is the free-air limit with no heatsinking.
Gate drive and switching — 27 nC total gate charge
With a 27 nC total gate charge at 10 V, a standard gate driver IC can switch this part at moderate frequencies without excessive drive current. The 2000 pF input capacitance at 30 V drain-source is a typical figure for this on-resistance class; the drive voltage range of 6 V to 10 V lets the designer trade off Rds(on) against gate drive complexity.
D2PAK footprint — thermal and layout considerations
The 2.8 V max gate threshold at 36 µA drain current means a 5 V gate drive from a logic-level source will turn the device on hard, but the 10 V drive is recommended for the lowest Rds(on).
Sourcing and supply posture
ROHS3 compliant. No official second-source or direct replacement is published by Infineon, so dual-sourcing requires qualification of an equivalent N-channel 60 V MOSFET in the same package.