Infineon OptiMOS N-Channel MOSFET, 80 V drain-source, 80 A continuous drain, 5.4 mOhm Rds(on) at 10 V, PG-TO263-3 (D2PAK) surface-mount, -55 to 175 °C junction temperature.
| Parameter | Value |
|---|---|
| Series | OptiMOS™ |
| FET type | N-Channel |
| Mounting type | Surface Mount |
| Drain to source voltage | 80 V |
| Drive voltage (Max rds on, min rds on) | 6V, 10V |
| Current - continuous drain (Id) @ 25°C | 80A (Tc) |
| Power dissipation | 150W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Vgs(th) (Max) @ id | 3.5V @ 90µA |
| Rds on (Max) @ id, vgs | 5.4mOhm @ 80A, 10V |
| Gate charge (Qg) (Max) @ vgs | 69 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 4750 pF @ 40 V |
The IPB054N08N3GATMA1: The drive voltage window is 6 V minimum for the lowest Rds(on) plateau and 10 V for the fully enhanced 5.4 mOhm value. The gate is rated ±20 V maximum. Input capacitance is 4750 pF at 40 V drain-source.
The IPB054N08N3GATMA1 carries an active lifecycle status and is ROHS3 compliant.
The maximum on-resistance is 5.4 mOhm at 80 A drain current with a 10 V gate drive. At 6 V gate drive the Rds(on) is higher but still within the device's rated drive voltage range.
Yes, the IPB054N08N3GATMA1 is ROHS3 compliant per the manufacturer's status.