The IPB054N06N3GATMA1 is an active OptiMOS N-channel MOSFET with ROHS3 compliance.
The headline on-resistance is 5.4 mOhm maximum at 80A drain current with 10V gate-to-source drive. This is the conduction loss figure the thermal design must budget for — at 80A continuous, I²R dissipation hits 34.6 W, which sits inside the 115 W package limit at case temperature but leaves little headroom if ambient is above 85°C. The 82 nC total gate charge at 10V means a gate driver delivering 1 A can switch this FET in about 82 ns, practical for hard-switching converters up to the low hundreds of kHz before gate-drive losses become significant.
60V Vdss, 80A continuous — sizing the power stage
Drain-to-source voltage is rated 60 V, which gives about 20% derating margin on a 48 V bus or 33% on a 36 V battery rail — comfortable for 12 V and 24 V systems but tight for a 48 V telecom supply under transient overvoltage.