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Infineon Technologies IPB049N08N5ATMA1

Infineon IPB049N08N5ATMA1 OptiMOS N-Ch MOSFET, 80V 80A D²Pak

MPNIPB049N08N5ATMA1
End of Life

Infineon OptiMOS™ N-channel MOSFET, 80 V drain-source voltage, 80 A continuous drain current, 4.9 mOhm max on-resistance at 10 V gate drive, in a D²Pak (TO-263) surface-mount package, -55°C to 175°C junction temperature.

$2.92Ref. price · indicative, final on quote
PackagingTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

IPB049N08N5ATMA1 Technical Specifications
ParameterValue
SeriesOptiMOS™
FET typeN-Channel
Mounting typeSurface Mount
Drain to source voltage80 V
Drive voltage (Max rds on, min rds on)6V, 10V
Current - continuous drain (Id) @ 25°C80A (Tc)
Power dissipation125W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Vgs(th) (Max) @ id3.8V @ 66µA
Rds on (Max) @ id, vgs4.9mOhm @ 80A, 10V
Gate charge (Qg) (Max) @ vgs53 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds3770 pF @ 40 V

Product details

175 °C junction — where this part lives comfortably

The IPB049N08N5ATMA1: The -55 °C to 175 °C operating junction temperature range covers automotive under-hood environments and industrial enclosures. The 125 W power dissipation at case temperature gives headroom for sustained high-current operation.

Gate drive and switching — what the numbers tell you

The 3.8 V maximum gate threshold at 66 µA means the part is fully enhanced with a 10 V gate signal; the drive voltage range of 6 V to 10 V for minimum Rds(on) lets you use a 10 V rail for lowest conduction loss or a 6 V rail to reduce gate-drive losses. The 3770 pF input capacitance at 40 V drain-source is the load the gate driver sees. The ±20 V maximum gate-source rating gives margin against ringing on long gate traces.

Package and ordering — which exact code you need

This MPN is the Tape & Reel (TR) variant of the D²Pak (TO-263-3) package; a Cut Tape (CT) option is also listed under the same base code. If your pick-and-place line runs reels, this is the ordering code. The PG-TO263-3 supplier device package is the Infineon internal designation. ROHS3 compliant per the lifecycle record.

Frequently asked questions

What is the Rds(on) of IPB049N08N5ATMA1?

The maximum on-resistance is 4.9 mOhm at 80 A drain current with a 10 V gate drive.

What package is IPB049N08N5ATMA1?

It comes in a D²Pak (TO-263-3) surface-mount package, also designated PG-TO263-3 by Infineon. Available in Tape & Reel (TR) or Cut Tape (CT).

Is IPB049N08N5ATMA1 RoHS compliant?

Yes, it is listed as ROHS3 compliant.