Infineon OptiMOS™ IPB048N15N5ATMA1, N-Channel MOSFET, 150 Vdss, 120 A Id, 4.8 mOhm Rds(on) at 60 A, 10 V, 100 nC Qg, PG-TO263-3-2, -55°C to 175°C.
| Parameter | Value |
|---|---|
| Series | OptiMOS™ |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 150 V |
| Drive voltage (Max rds on, min rds on) | 8V, 10V |
| Current - continuous drain (Id) @ 25°C | 120A (Tc) |
| Power dissipation | 300W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Vgs(th) (Max) @ id | 4.6V @ 264µA |
| Rds on (Max) @ id, vgs | 4.8mOhm @ 60A, 10V |
| Gate charge (Qg) (Max) @ vgs | 100 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 7800 pF @ 75 V |
ROHS3 compliant per the listing.
Housed in the PG-TO263-3-2 package (D²Pak, 2 leads plus tab), this is a surface-mount part with the drain tab as the primary thermal path.
The maximum gate charge is 100 nC at a 10 V gate drive, which sets the switching-loss budget and the required gate-driver current.
The junction temperature range is -55 °C to 175 °C, covering automotive and industrial applications.