Infineon Technologies · OptiMOS™ Series
Infineon OptiMOS™ IPB044N15N5ATMA1, N-Channel MOSFET, 150 V Vdss, 174 A Id, 4.4 mOhm Rds(on) at 10 V, PG-TO263-7 package, -55°C to 175°C.
MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T
| Parameter / Attribute | Specification / Value |
|---|---|
| Series | OptiMOS™ |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 150 V |
| Drive voltage (Max rds on, min rds on) | 8V, 10V |
| Current - continuous drain (Id) @ 25°C | 174A (Tc) |
| Power dissipation | 300W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-263-7, D²Pak (6 Leads + Tab) |
| Vgs(th) (Max) @ id | 4.6V @ 264µA |
| Rds on (Max) @ id, vgs | 4.4mOhm @ 87A, 10V |
| Gate charge (Qg) (Max) @ vgs | 100 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 8000 pF @ 75 V |
The 4.4 mOhm Rds(on) at 10 V gate drive sets the conduction-loss floor for high-current switching — at 87 A the voltage drop across the channel is under 0.4 V, which keeps the dissipation manageable even in a TO-263-7 package.
The 8000 pF input capacitance at 75 V drain-source means the gate driver must source enough peak current to hit the target rise time — a 2 A driver will slew the gate in about 50 ns.
ROHS3 compliant per Infineon's declaration.
