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Infineon Technologies IPB03N03LAG

Infineon IPB03N03LAG N-Channel Power MOSFET, 25 V, 80 A

MPNIPB03N03LAG
End of Life

Infineon IPB03N03LAG OptiMOS N-Channel Power MOSFET, 25 V Vdss, 80 A Id, 2.7 mOhm Rds(on) at 10 V, 57 nC Qg, TO-263-3 D²Pak, -55°C to 175°C.

$0.93Ref. price · indicative, final on quote
Infineon Technologies IPB03N03LAG datasheet (PDF)
PackagingTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
RoHSROHS3 Compliant
SeriesOptiMOS™
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IPB03N03LAG specifications
ParameterValue
SeriesOptiMOS™
FET typeN-Channel
MountingSurface Mount
Drain to source voltage25 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C80A (Tc)
Power dissipation150W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageBulk
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Vgs(th) (Max) @ id2V @ 100µA
Rds on (Max) @ id, vgs2.7mOhm @ 55A, 10V
Gate charge (Qg) (Max) @ vgs57 nC @ 5 V
Input capacitance (Ciss) (Max) @ vds7027 pF @ 15 V

Product details

Its headline rating is a 2.7 mOhm maximum on-resistance at 55 A with a 10 V gate drive, which puts it in the low-Rds(on) bracket for a 25 V part. The 57 nC gate charge at 5 V tells you it switches fast enough for medium-frequency DC-DC converters and motor drives, but the 7027 pF input capacitance at 15 V means you need a gate driver with decent peak current — don't try to drive it directly from a logic pin. Package is the TO-263-3 (D²Pak, Infineon's PG-TO263-3-2 variant), a surface-mount tabbed package that handles the 150 W dissipation at the case — bolt it to a heatsink or a copper plane.

Gate drive and switching — what the numbers mean

At 4.5 V the Rds(on) will be higher than the 2.7 mOhm spec (which is quoted at 10 V).

The TO-263-3 (D²Pak) is a surface-mount package with a large exposed metal tab — the drain connection.

It is an Infineon OptiMOS part, so it is widely distributed and second-sourced through the independent channel.

Frequently asked questions

Is IPB03N03LAG suitable for high-frequency switching?

The 57 nC gate charge at 5 V and 7027 pF input capacitance at 15 V make this part suitable for medium-frequency switching up to about 50 kHz in hard-switched topologies. For high-frequency switching above 100 kHz, the switching losses from the Miller plateau will be significant — consider a MOSFET with lower gate charge and input capacitance for that application.