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Infineon Technologies IPB039N10N3GATMA1

IPB039N10N3GATMA1 OptiMOS N-Ch 100V 160A MOSFET, 3.9mOhm

MPNIPB039N10N3GATMA1
End of Life

Infineon OptiMOS IPB039N10N3GATMA1, N-Channel MOSFET, 100V Vdss, 160A Id, 3.9mOhm Rds(on) @ 100A 10V, 117nC Qg, PG-TO263-7, -55 to 175°C.

$2.93Ref. price · indicative, final on quote
PackagingTO-263-7, D²Pak (6 Leads + Tab)
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
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Specifications

IPB039N10N3GATMA1 Technical Specifications
ParameterValue
SeriesOptiMOS™
FET typeN-Channel
Mounting typeSurface Mount
Drain to source voltage100 V
Drive voltage (Max rds on, min rds on)6V, 10V
Current - continuous drain (Id) @ 25°C160A (Tc)
Power dissipation214W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-263-7, D²Pak (6 Leads + Tab)
Vgs(th) (Max) @ id3.5V @ 160µA
Rds on (Max) @ id, vgs3.9mOhm @ 100A, 10V
Gate charge (Qg) (Max) @ vgs117 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds8410 pF @ 50 V

Product details

Gate charge and switching speed

Total gate charge is 117 nC at 10 V. For a hard-switched converter running at 100 kHz, the average gate-drive current is 11.7 mA — well within the capability of a standard driver IC, but the peak current during the Miller plateau needs a driver with at least 2 A source-sink to keep the switching edges clean. Input capacitance is 8410 pF at 50 V drain bias; the driver output impedance and the external gate resistor set the rise-time budget.

175°C junction — thermal headroom for tough environments

The junction is rated from -55°C to 175°C. That 175°C ceiling is a genuine design margin for automotive under-hood or industrial motor-drive enclosures where ambient air can hit 85°C and the self-heating from 214 W dissipation pushes the die temperature well above the 150°C limit of older MOSFET families.

Frequently asked questions

What is the Rds(on) of the IPB039N10N3GATMA1?

The maximum on-resistance is 3.9 mOhm at a drain current of 100 A with a gate-source voltage of 10 V. The drive voltage for minimum Rds(on) is 10 V, with a 6 V threshold for the turn-on knee.

Is the IPB039N10N3GATMA1 RoHS compliant?

Yes, the part is ROHS3 compliant.