Infineon Technologies · OptiMOS™ Series
Infineon OptiMOS IPB039N10N3GATMA1, N-Channel MOSFET, 100V Vdss, 160A Id, 3.9mOhm Rds(on) @ 100A 10V, 117nC Qg, PG-TO263-7, -55 to 175°C.
MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T
| Parameter / Attribute | Specification / Value |
|---|---|
| Series | OptiMOS™ |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 100 V |
| Drive voltage (Max rds on, min rds on) | 6V, 10V |
| Current - continuous drain (Id) @ 25°C | 160A (Tc) |
| Power dissipation | 214W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-263-7, D²Pak (6 Leads + Tab) |
| Vgs(th) (Max) @ id | 3.5V @ 160µA |
| Rds on (Max) @ id, vgs | 3.9mOhm @ 100A, 10V |
| Gate charge (Qg) (Max) @ vgs | 117 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 8410 pF @ 50 V |
Total gate charge is 117 nC at 10 V. Input capacitance is 8410 pF at 50 V drain bias; the driver output impedance and the external gate resistor set the rise-time budget.
That 175°C ceiling is a genuine design margin for automotive under-hood or industrial motor-drive enclosures where ambient air can hit 85°C and the self-heating from 214 W dissipation pushes the die temperature well above the 150°C limit of older MOSFET families.
