120 V, 3.8 mOhm — the conduction-loss ceiling
The IPB038N12N3GATMA1 is an N-channel OptiMOS MOSFET rated 120 V drain-source, 120 A continuous drain current, with 3.8 mOhm max on-resistance at 100 A, 10 V gate drive.
Thermal envelope and package
Junction temperature range is -55°C to 175°C, which puts this part in the same thermal class as automotive-grade power switches — suitable for under-hood electronics, industrial motor drives, and high-ambient power supplies. The ±20 V maximum gate-source voltage gives margin for gate-drive overshoot in hard-switching topologies.
Active lifecycle — no obsolescence clock
For the production buyer, this means the BOM line is not under an obsolescence deadline — standard supply through the distribution channel continues.
