IPB035N08N3GATMA1

Infineon Technologies · OptiMOS™ Series

Infineon OptiMOS™ IPB035N08N3GATMA1, N-Channel MOSFET, 80 V Vdss, 100 A Id, 3.5 mOhm Rds(on) at 10 V, 117 nC Qg, TO-263-3 (D²Pak), -55°C to 175°C junction.

Infineon Technologies IPB035N08N3GATMA1
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[IN STOCK] In Stock: 2 pcs
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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

IPB035N08N3GATMA1 specifications
Parameter / AttributeSpecification / Value
SeriesOptiMOS™
FET typeN-Channel
MountingSurface Mount
Drain to source voltage80 V
Drive voltage (Max rds on, min rds on)6V, 10V
Current - continuous drain (Id) @ 25°C100A (Tc)
Power dissipation214W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Vgs(th) (Max) @ id3.5V @ 155µA
Rds on (Max) @ id, vgs3.5mOhm @ 100A, 10V
Gate charge (Qg) (Max) @ vgs117 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds8110 pF @ 40 V

Technical details

IPB035N08N3GATMA1
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