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Infineon Technologies IPB035N08N3GATMA1
Infineon Technologies

Infineon IPB035N08N3GATMA1 N-Channel MOSFET, 80 V, 100 A

MPNIPB035N08N3GATMA1
End of Life

Infineon OptiMOS™ IPB035N08N3GATMA1, N-Channel MOSFET, 80 V Vdss, 100 A Id, 3.5 mOhm Rds(on) at 10 V, 117 nC Qg, TO-263-3 (D²Pak), -55°C to 175°C junction.

$3.82Ref. price · indicative, final on quote
IPB035N08N3GATMA1 datasheet
PackagingTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

IPB035N08N3GATMA1 Technical Specifications
ParameterValue
SeriesOptiMOS™
FET typeN-Channel
Mounting typeSurface Mount
Drain to source voltage80 V
Drive voltage (Max rds on, min rds on)6V, 10V
Current - continuous drain (Id) @ 25°C100A (Tc)
Power dissipation214W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Vgs(th) (Max) @ id3.5V @ 155µA
Rds on (Max) @ id, vgs3.5mOhm @ 100A, 10V
Gate charge (Qg) (Max) @ vgs117 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds8110 pF @ 40 V

Product details

Gate charge and switching loss budget

Total gate charge at 10 V is 117 nC, which sets the driver current requirement: at 100 kHz switching frequency the average gate-drive current is roughly 11.7 mA, well within the capability of a standard half-bridge driver IC. Input capacitance Ciss is 8110 pF at 40 V drain-source — this influences the driver's peak current capability for fast edge rates and the turn-on delay in hard-switched topologies.

Package and thermal interface

Housed in a TO-263-3 (D²Pak) surface-mount package with the exposed drain tab on the top side. The supplier device code is PG-TO263-3. Maximum power dissipation is 214 W at case temperature, but the real thermal budget depends on the PCB copper area under the tab and the airflow across the heatsink pad. The gate threshold voltage is 3.5 V maximum at 155 µA drain current, so a 6 V drive is the minimum recommended for full enhancement; 10 V drive achieves the rated Rds(on).

Lifecycle and compliance

ROHS3 compliant per the lifecycle entry, suitable for lead-free assembly processes.

Frequently asked questions

Is IPB035N08N3GATMA1 RoHS compliant?

Yes, it is ROHS3 compliant.

What are the alternatives to IPB035N08N3GATMA1?

The peer IPD50R950CEAUMA1 is a CoolMOS™ CE N-channel MOSFET but operates at 500 V with 950 mOhm Rds(on) and 4.3 A — a different voltage/current class, not a direct functional substitute for the 80 V / 100 A OptiMOS™ part.