Infineon OptiMOS™ 3, N-Channel MOSFET, 60V Vdss, 100A Id, 3.4mOhm Rds(on) at 10V, 130nC Qg, PG-TO263-7-3, -55°C to 175°C.
| Parameter | Value |
|---|---|
| Series | OptiMOS™ 3 |
| FET type | N-Channel |
| Mounting type | Surface Mount |
| Drain to source voltage | 60 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 100A (Tc) |
| Power dissipation | 167W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Bulk |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-263-7, D²Pak (6 Leads + Tab) |
| Vgs(th) (Max) @ id | 4V @ 93µA |
| Rds on (Max) @ id, vgs | 3.4mOhm @ 100A, 10V |
| Gate charge (Qg) (Max) @ vgs | 130 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 11000 pF @ 30 V |
The IPB034N06N3G: The junction temperature range spans -55°C to 175°C.
No last-time-buy notice or end-of-life announcement is on record. ROHS3 compliant per Infineon lifecycle record.
This is a current-production Infineon part, sourced through independent distribution and quoted to order against an RFQ.
The maximum on-resistance is 3.4 mOhm at 100 A drain current with 10 V gate drive. This is the spec that determines conduction loss in high-current paths.
Yes, the IPB034N06N3G is ROHS3 compliant per Infineon's lifecycle record.