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Infineon Technologies IPB030N08N3GATMA1

Infineon IPB030N08N3GATMA1 OptiMOS N-Ch MOSFET

MPNIPB030N08N3GATMA1
End of Life

Infineon OptiMOS™ IPB030N08N3GATMA1, N-Channel MOSFET, 80 V Vdss, 160 A continuous drain, 3 mOhm Rds(on) max at 100 A, 10 V gate drive, PG-TO263-7 package, -55°C to 175°C junction temperature.

$4.02Ref. price · indicative, final on quote
PackagingTO-263-7, D²Pak (6 Leads + Tab)
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

IPB030N08N3GATMA1 Technical Specifications
ParameterValue
SeriesOptiMOS™
FET typeN-Channel
Mounting typeSurface Mount
Drain to source voltage80 V
Drive voltage (Max rds on, min rds on)6V, 10V
Current - continuous drain (Id) @ 25°C160A (Tc)
Power dissipation214W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-263-7, D²Pak (6 Leads + Tab)
Vgs(th) (Max) @ id3.5V @ 155µA
Rds on (Max) @ id, vgs3mOhm @ 100A, 10V
Gate charge (Qg) (Max) @ vgs117 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds8110 pF @ 40 V

Product details

Package and mounting — TO263-7 with tab

The PG-TO263-7 package (D²Pak variant with 6 leads plus the tab) is a surface-mount power package. The tab is the drain connection and must be soldered to a copper island on the PCB for both electrical connection and thermal dissipation. The 6 leads are gate, source, and sense connections — the tab carries the bulk of the drain current. Ensure the PCB layout provides a low-inductance gate-drive loop and sufficient copper area on the drain island to handle the 214 W dissipation at elevated ambient temperatures.

Lifecycle and compliance

The IPB030N08N3GATMA1 is listed as Active in production and ROHS3 compliant. No end-of-life notification or successor part is recorded.

Frequently asked questions

What is the difference between the IPB030N08N3GATMA1 and the IPD50R950CEAUMA1?

The IPD50R950CEAUMA1 is a CoolMOS™ N-channel MOSFET rated at 500 V Vdss and 4.3 A, with 950 mOhm Rds(on) — a completely different voltage and current class. The IPB030N08N3GATMA1 is an 80 V, 160 A part with 3 mOhm Rds(on). They are not functional substitutes; the IPB030N08N3GATMA1 is for low-voltage, high-current switching, while the IPD50R950CEAUMA1 targets high-voltage, low-current applications like auxiliary supplies.

Is the IPB030N08N3GATMA1 ROHS compliant?

Yes, the IPB030N08N3GATMA1 is ROHS3 compliant.