Infineon OptiMOS™ IPB030N08N3GATMA1, N-Channel MOSFET, 80 V Vdss, 160 A continuous drain, 3 mOhm Rds(on) max at 100 A, 10 V gate drive, PG-TO263-7 package, -55°C to 175°C junction temperature.
| Parameter | Value |
|---|---|
| Series | OptiMOS™ |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 80 V |
| Drive voltage (Max rds on, min rds on) | 6V, 10V |
| Current - continuous drain (Id) @ 25°C | 160A (Tc) |
| Power dissipation | 214W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-263-7, D²Pak (6 Leads + Tab) |
| Vgs(th) (Max) @ id | 3.5V @ 155µA |
| Rds on (Max) @ id, vgs | 3mOhm @ 100A, 10V |
| Gate charge (Qg) (Max) @ vgs | 117 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 8110 pF @ 40 V |
The PG-TO263-7 package (D²Pak variant with 6 leads plus the tab) is a surface-mount power package. The 6 leads are gate, source, and sense connections — the tab carries the bulk of the drain current. Ensure the PCB layout provides a low-inductance gate-drive loop and sufficient copper area on the drain island to handle the 214 W dissipation at elevated ambient temperatures.
No end-of-life notification or successor part is recorded.
The IPD50R950CEAUMA1 is a CoolMOS™ N-channel MOSFET rated at 500 V Vdss and 4.3 A, with 950 mOhm Rds(on) — a completely different voltage and current class. The IPB030N08N3GATMA1 is an 80 V, 160 A part with 3 mOhm Rds(on). They are not functional substitutes; the IPB030N08N3GATMA1 is for low-voltage, high-current switching, while the IPD50R950CEAUMA1 targets high-voltage, low-current applications like auxiliary supplies.
Yes, the IPB030N08N3GATMA1 is ROHS3 compliant.